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Technical Articles

1. A Fast Rewritable 90nm 512Mb NOR “B4-Flash” Memory with 8F2 Cell Size
By T. Ogura. Presented at 2011 Symposium on VLSI Circuits
2. A True 6F2 NOR Flash Memory Cell Technology- Impact of Floating Gate B4-Flash on NOR Scaling -
By S. Shimizu. Presented at 2011 IMW
3. Highly Reliable B4-Flash Technology for High Density Embedded NVM Application
By N. Ajika. Presented at 2011 IMV
4. A 10k-Cycling Reliable 90nm Logic NVM “eCFlash”(embedded CMOS Flash) Technology
By S. Shukuri. Presented at 2011 IMV
5. A 90nm Floating Gate "B4-Flash" Memory Technology - Breakthrough of the Gate Length Limitation on NOR Flash Memory -
By M. Mihara. Presented at 2009 IMW
6. Advantage of Floating Gate B4-Flash over Retention Reliability after Cycling
- Characterization by Variation of Transconductance - By S. Shukuri. Presented at 2008 NVSM Workshop
7. A Highly Reliable logic NVM "eCFlash (embedded CMOS Flash)" Utilizing Differential Sense-Latch Cell
with Charge-Trapping Storage By T. Ogura. Presented at 2008 NVSM Workshop
8. Floating Gate B4-Flash Memory Technology Utilizing Novel Programming Scheme - Highly Scalable,
Efficient and Temperature Independent Programming - By S. Shukuri. Presented at 2007 NVSM Workshop
9. A 1.8V 4Mb Floating-Gate NOR Type B4-Flash Test Chip for 100MB/s
Programming Speed By M. Mihara. Presented at 2007 NVSM Workshop
10. A 60nm NOR Flash Memory Cell Technology Utilizing Back Bias Assisted
Band-to-Band Tunneling Induced Hot-Electron Injection (B4-Flash)
By S. Shukuri. Presented at 2006 Symposium on VLSI Technology